Physics Class 12 MCQ Semiconductor Electronics : Materials, Devices And Simple Circuits – Chapter 14

According to NCERT Physics Class 12 MCQ Semiconductor Electronics : Materials, Devices And Simple Circuits – Chapter 14, Practice a lot of MCQs from semiconductor electronics chapter 14 physics class 12. As we all know that semiconductor electronics is a scoring chapter and if you revise this chapter with complete dedication and practice a lot of MCQs from this chapter, then your possibility of scoring really good marks increase.

In this article we have provided you with a lot of questions on semiconductor electronics : material, devices and simple circuits. Practice these questions ‘n’ number of times and improve your physics score.

Physics Class 12 MCQ Ray Optics And Optical Instruments – Chapter 9

Physics Class 12 MCQ Wave Optics – Chapter 10

Physics Class 12 MCQ Dual Nature of Radiation And Matter – Chapter 11

Physics Class 12 MCQ Semiconductor Electronics : Materials, Devices And Simple Circuits

Ques 1: In Conductor, Semiconductor and Insulator, the forbidden energy gap are E1, E2 and E3 respectively. Which one is correct

  • E1 < E2 < E3
  • E1 > E2 = E3
  • E1 = E2 < E3
  • E1 > E2 > E3

E1 < E2 < E3

Ques 2: Silicon is doped with which of the following to obtain P type semiconductor

  • Phosphorus
  • Gallium
  • Germanium
  • Bismuth

Gallium

Ques 3: What happens to resistance of an intrinsic semiconductor when heated

  • increases
  • remains constant
  • decreases
  • decreases linearly

decreases

Ques 4: A semiconductor has an electron concentration of 6 × 1022 per m3 and hole concentration of 8.5 × 109 per m3. The it is

  • N type semiconductor
  • P type semiconductor
  • intrinsic semiconducotr
  • conductor

N type semiconductor

Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 MCQs

Ques 5: What type of doping is used in Zener diode

  • light
  • moderate
  • heavy
  • no doping

heavy

Ques 6: In an n-type silicon, which of the following statement is true:

  • Electrons are majority carriers and trivalent atoms are the dopants.
  • Electrons are minority carriers and pentavalent atoms are the dopants.
  • Holes are minority carries and pentavalent atoms are the dopants.
  • Holes are majority carries and trivalent atoms are the dopants.

Holes are minority carries and pentavalent atoms are the dopants.

Ques 7: Carbon, silicon and germanium have four valence electrons each. These are characterized by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (EgSi and (Eg)Ge. Which of the following statements is ture?

  • (Eg)Si < (Eg)Ge < (Eg)C
  • (Eg)C < (Eg)Ge < (Eg)Si
  • (Eg)C > (Eg)Si > (Eg)Ge
  • (Eg)C < (Eg)Si < (Eg)Ge

(Eg)C > (Eg)Si > (Eg)Ge

Ques 8: In an unbiased p-n junction, holes diffuse from the p-region to n-region because

  • free electrons in the n-region attract them.
  • they move across the junction by the potential difference
  • hole concentration in p-region is more as compared to n-region.
  • All the above.

hole concentration in p-region is more as compared to n-region.

MCQs From Semiconductor Electronics: Materials, Devices and Simple Circuits Class 12 Physics

Ques 9: When a forward bias is applied to a p-n junction, it

  • raises the potential barrier.
  • reduces the majority carrier current to zero.
  • lower the potential barrier.
  • none of the above

lower the potential barrier.

Ques 10: In a p-type silicon, which of the following statement is ture:

  • Electrons are majority carriers and trivalent
  • ELectorns are minority carriers and pentavalent atoms are the dopants.
  • Holes are minority carries and pentavalent atoms are the dopants.
  • Holes are majority carries and trivalent atoms are the dopants.

Holes are majority carries and trivalent atoms are the dopants.

Ques 11: The intrinsic semiconductor becomes an insulator at

  • 00C
  • -1000C
  • 300 K
  • 0 K

0 K

Ques 12: In the forward bias arrangement of a PN-Junction diode

  • The N-end is connected to the positive terminal of the battery
  • The P-end is connected to the positive terminal of the battery
  • The direction of current is from N-end to P-end in the diode
  • The P-end is connected to the negative terminal of battery

The P-end is connected to the positive terminal of the battery

Ques 13: In a PN-Junction diode

  • The current in the reverse biased condition is generally very small – μA
  • The current in the reverse biased condition is independent of the bias voltage
  • The reverse biased current is strongly dependent on the applied bias voltage
  • The forward biased current is very small in comparison to reverse biased current

The current in the reverse biased condition is generally very small – μA

Ques 14: A P-type semiconductor can be obtained by adding

  • Arsenic to pure silicon
  • Gallium to pure silicon
  • Antimony to pure germanium
  • Phosphorous to pure germanium

Gallium to pure silicon

Semiconductor Electronics MCQs Chapter 14 Class 12 Physics

Ques 15: Electrical conductivity of a semiconductor

    • Decreases with the rise in its temperature
    • Increases with the rise in its temperature
    • Does not change with the rise in its temperature
    • First increases and then decreases with the rise

    Increases with the rise in its temperature

Ques 16: The cut-in voltage for silicon diode is approximately

  • 0.2 V
  • 0.6 V
  • 1.1 V
  • 1.4 V

0.6 V

Ques 17: The depletion layer in the P-N junction region is caused by

  • Drift of holes
  • Diffusion of charge carriers
  • Migration of impurity ions
  • Drift of electrons

Diffusion of charge carriers

Multiple Choice Questions On Semiconductor Electronics

Ques 18: Which is reverse biased diode

b

Ques 19: If a full wave rectifier circuit is operating from 50 Hz main, the fundamental frequency in the ripple will be

  • 50 Hz
  • 70.7 Hz
  • 100 Hz
  • 2.5 Hz

100 Hz

Ques 20: What is the current in the cirucit shown in

  • 0.2 V
  • 0.6 V
  • 1.1 V
  • 1.4 V

0.6 V

Ques 21: The energy gap between conduction band and valence band is of order of 0.07 V. it is a/an

  • insulator
  • conductor
  • semiconductor
  • alloy

conductor

Physics Chapter Wise MCQ Questions and Answers

  1. Electrostatic Charges and Fields MCQ – Chapter 1
  2. Electrostatic Potential and Capacitance MCQ – Chapter 2
  3. Current Electricity MCQ Question Answer – Chapter 3
  4. Moving Charges and Magnetism MCQ – Chapter 4
  5. Magnetism And Matter MCQ – Chapter 5
  6. Electromagnetic Induction MCQ – Chapter 6
  7. MCQ Alternating Current MCQ – Chapter 7
  8. Electromagnetic Waves MCQ – Chapter 8
  9. Ray Optics And Optical Instruments MCQ – Chapter 9
  10. MCQ Wave Optics MCQ – Chapter 10
  11. Dual Nature of Radiation and Matter MCQ – Chapter 11
  12. Atoms MCQ – Chapter 12
  13. Nuclei MCQ – Chapter 13
  14. Semiconductor Electronics : Materials, Devices And Simple Circuits MCQ – Chapter 14

physics 12 mcq

We hope you liked the collection of questions of Semiconductor Electronics Chapter 14 Physics Class 12. Practice these questions and they will definitely give you good results. In case of queries, you may notify us via comment section below.

Updated: October 17, 2021 — 11:56 am

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